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71.
Can Li Dr. Zheng Yang Lei Wang Prof. Dr. Yinlong Guo Prof. Dr. Zheng Huang Prof. Dr. Shengming Ma 《Angewandte Chemie (Weinheim an der Bergstrasse, Germany)》2020,132(15):6337-6342
An efficient pincer-ligand-based cobalt-complex-catalyzed allene hydroboration affording Z-allylic boronates is described. The reaction demonstrates an excellent regio- as well as Z-stereoselectivity and a wide substrate scope that tolerates many functional groups. Based on solvent-assisted electrospray ionization mass spectrometry (SAESI-MS) studies, a rationale for the cobalt-catalyzed hydroboration involving the highly selective insertion of an allene into the Co−H bond to form Z-allylic cobalt intermediates is proposed. 相似文献
72.
为研究含有少量奥克托金(HMX)且以三氨基三硝基苯(TATB)为基的高能钝感炸药PBX-3的冲击起爆反应增长规律,采用火炮驱动蓝宝石飞片的方法和铝基组合式电磁粒子速度计技术进行了一维平面冲击实验。通过实验测量撞击表面及内部不同深度处的冲击波后粒子速度,得到PBX-3炸药的Hugoniot关系。根据冲击波示踪器所测数据绘制了炸药到爆轰的时间-距离(x-t)图,获得了反映炸药冲击起爆性能的Pop关系。将入射压力为12.964 GPa时达到爆轰的6条速度曲线修整成相同零点,通过读取6条曲线的分离点即反应区末端的C-J点,计算出化学反应区时间和宽度。 相似文献
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Li Bin Zhang Ying Ge Junyue Liu Kehui Li Ping 《Analytical and bioanalytical chemistry》2018,410(28):7449-7456
Analytical and Bioanalytical Chemistry - Appropriate sample preparation is pivotally important to obtain high-quality mass spectrometry imaging (MSI) data. Unlike mammalian tissues, preparation of... 相似文献
75.
Nonlinear Dynamics - The aim of this paper is to tackle the problem of adaptive fuzzy voltage-based tracking control for uncertain electrically driven robotic manipulators subject to input delay... 相似文献
76.
Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×1015 cm-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA. 相似文献
77.
Shang‐Xiong Huang‐Fu Jin‐Ni Shen Prof. Hua Lin Prof. Ling Chen Prof. Li‐Ming Wu 《Chemistry (Weinheim an der Bergstrasse, Germany)》2015,21(27):9809-9815
A novel type of supertetrahedral connectivity is exhibited by the 72‐atom discrete supercubooctahedron in (Cs6Cl)2Cs5[Ga15Ge9Se48] ( 1 ), which undergoes both cation and anion exchange, as revealed by unambiguous single‐crystal X‐ray diffraction data. Electronic‐structure studies helped to understand the Ge/Ga distribution. 相似文献
78.
Back Cover: Covalent Modification of Graphene Oxide with Carbazole Groups for Laser Protection (Chem. Eur. J. 12/2015) 下载免费PDF全文
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